Apparatus and method of manufacture for integrated circuit...

Semiconductor device manufacturing: process – Having diamond semiconductor component

Reexamination Certificate

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C257SE21054

Reexamination Certificate

active

07138292

ABSTRACT:
An integrated circuit, or portion thereof, such as a CMOS device, includes an epitaxially grown dielectric on a silicon carbide base. The epitaxially grown dielectric forms a gate dielectric and the silicon carbide base serves as a channel region for the CMOS device. In various embodiments, the epitaxially grown dielectric may be a crystalline carbon or carbon-containing film.

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