Semiconductor device manufacturing: process – Having diamond semiconductor component
Reexamination Certificate
2006-11-21
2006-11-21
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Having diamond semiconductor component
C257SE21054
Reexamination Certificate
active
07138292
ABSTRACT:
An integrated circuit, or portion thereof, such as a CMOS device, includes an epitaxially grown dielectric on a silicon carbide base. The epitaxially grown dielectric forms a gate dielectric and the silicon carbide base serves as a channel region for the CMOS device. In various embodiments, the epitaxially grown dielectric may be a crystalline carbon or carbon-containing film.
REFERENCES:
patent: 5736753 (1998-04-01), Ohno et al.
patent: 5877041 (1999-03-01), Fuller
patent: 6365919 (2002-04-01), Tihanyi et al.
patent: 6437371 (2002-08-01), Lipkin et al.
patent: 6660598 (2003-12-01), Hanafi et al.
Nobuyuki Sugii, Digh Hisamoto, Katsuyoshi Washio, Natsuki Yokoyama, and Shin'ichiro Kimura, “Enhanced Performance of Strained-Si MOSFETs on CMP SiGe Virtual Substrate,” IEEE, 2001, 0-7803-7052-X/01, p. 1-4.
Paul Comita, AnnaLena Thilderkvist, and Arkadii V. Samoilov, “Applied Materials FEOL Seminar 2002,” Oct. 29, 2002, p. 1-37.
K. Rim, S. Koester, M. Hargrove, J. Chu, P. M. Mooney, J. Ott, T. Kanarsky, P. Ronsheim, M.Ieong, A. Grill, and H.-S. P. Wong, “Strained Si NMOSFETs for High Performance CMOS Technology,” IEEE 2001 Symposium on VLSI Technology Digest of Technical Papers, 2001, p. 59 (1-2).
Yee-Chia Yeo, Qiang Lu, Chenming Hu, Tsu-Jae King, T. Kawashima, M. Oishi, S. Mashiro, and J. Sakai, “Enhanced performance in sub-100 nm CMOSFETs using strained epitaxial silicon-germanium”, IEEE International Electron Device Meeting Technical Digest, pp. 753-756, San Francisco, CA, Dec. 2000, www.eecs.berkeley.edu/IPRO/Summary/01abstracts/ycyeo.1.html, p. 1-4.
R.E. Stallcup, A.F. Aviles, and J.M. Perez, “Atomic Resolution Ultrahigh Vacuum Scanning Tunneling Microscopy of Epitaxial Diamond (100) Films,” Appl. Phys. Lett. 66 (18), American Institute of Physics, May 1, 1995, p. 2331-2333.
Akira Yamada, Tatsuro Watahiki, Shuhei Yagi, Katsuya Abe, and Makoto Konagai, “Epitaxial Growth of Strained Si1−xCxon Si and Its Application to MOSFET,” International Symposium on Quantum Effect Electronics, 2002.
Mirabedini Mohammad R.
Sukharev Valeriy
Coleman W. David
Lindsay L. Jon
LSI Logic Corporation
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