Apparatus and method of driving non-volatile DRAM

Details Apparatus and method of driving non-volatile DRAM Apparatus and method of driving non-volatile DRAM

2007-05-29

2007-05-29

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S149000, C365S185080

Reexamination Certificate

active

11284705

ABSTRACT:
A unit cell included in a non-volatile dynamic random access memory (NVDRAM) includes a control gate layer coupled to a word line; a capacitor for storing data; a floating transistor for transmitting stored data in the capacitor to a bit line, gate of the floating transistor being a single layer and serving as a temporary data storage; and a first insulating layer between the control gate layer and the gate of the floating transistor, wherein a voltage supplied to body of the floating transistor is controllable.

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