Apparatus and method of driving non-volatile DRAM

Details Apparatus and method of driving non-volatile DRAM Apparatus and method of driving non-volatile DRAM

2006-02-07

2006-02-07

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S149000, C365S185180

Reexamination Certificate

active

06996007

ABSTRACT:
A unit cell included in a non-volatile dynamic random access memory (NVDRAM) includes a control gate layer coupled to a word line; a capacitor for storing data; a floating transistor for transmitting stored data in the capacitor to a bit line, gate of the floating transistor being a single layer and serving as a temporary data storage; and a first insulating layer between the control gate layer and the gate of the floating transistor, wherein a voltage supplied to body of the floating transistor is controllable.

REFERENCES:
patent: 4545035 (1985-10-01), Guterman et al.
patent: 5043946 (1991-08-01), Yamauchi et al.
patent: 5251171 (1993-10-01), Yamauchi
patent: 6009011 (1999-12-01), Yamauchi

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