Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1998-12-11
2000-09-19
Powell, William
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
216 84, 216 88, 438747, 438753, 438 8, 438 14, H01L 2100
Patent
active
061211478
ABSTRACT:
A method of planarizing a semiconductor wafer to a distance from a semiconductor substrate of the wafer is disclosed. The method includes the step of forming in the wafer a metallic reporting substance that is at the predetermined distance from the substrate of the wafer. The method also includes the step of polishing a first side of the wafer in order to remove material from the wafer. The method further includes the step of utilizing an atomic absorption spectroscopic technique to detect the presence of the metallic reporting substance in the material removed from the wafer. Moreover, the method includes the step of terminating the polishing step in response to the detection of the metallic reporting substance. An associated apparatus for polishing a semiconductor wafer down to a metallic reporting substance of the wafer is also described.
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Allman Derryl D. J.
Daniel David W.
Gregory John W.
LSI Logic Corporation
Powell William
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