Apparatus and method of crystallizing amorphous silicon

Coating processes – Direct application of electrical – magnetic – wave – or... – Pretreatment of substrate or post-treatment of coated substrate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C427S555000, C438S487000, C438S798000, C438S799000, C117S008000, C117S010000

Reexamination Certificate

active

10025907

ABSTRACT:
A sequential lateral solidification apparatus includes a laser generator for generating and emitting a laser beam; an X-Y stage movable in two orthogonal axial directions; and a mask arranged between the laser generator and the X-Y stage. The mask has a plurality of slits through which the laser beam passes. An objective lens for scaling down the laser beam is arranged between the mask and the X-Y stage. A mask stage is connected to the mask for controlling minute movement of the mask for crystallizing amorphous silicon in one block.

REFERENCES:
patent: 6326286 (2001-12-01), Park et al.
patent: 6368945 (2002-04-01), Im
patent: 6495405 (2002-12-01), Voutsas et al.
patent: 6514339 (2003-02-01), Jung
patent: 6537863 (2003-03-01), Jung
patent: 6555449 (2003-04-01), Im et al.
patent: 6573163 (2003-06-01), Voutsas et al.
patent: 6573531 (2003-06-01), Im et al.
patent: 6686978 (2004-02-01), Voutsas
patent: 6767804 (2004-07-01), Crowder
patent: 6770545 (2004-08-01), Yang
patent: 6777276 (2004-08-01), Crowder et al.
patent: 6867151 (2005-03-01), Jung
patent: 6908835 (2005-06-01), Sposili et al.
patent: 6946367 (2005-09-01), Matsumura et al.
patent: 6949422 (2005-09-01), Kim
patent: 6961117 (2005-11-01), Im
patent: 6984573 (2006-01-01), Yamazaki et al.
patent: 6989300 (2006-01-01), Tanabe
patent: 7008863 (2006-03-01), Kim et al.
patent: 7015123 (2006-03-01), Yang
patent: 7064016 (2006-06-01), Kasahara et al.
patent: 7071082 (2006-07-01), Jung
patent: 7135388 (2006-11-01), Ryu et al.
patent: 7192627 (2007-03-01), Jung
patent: 7250331 (2007-07-01), Kim
patent: 7294857 (2007-11-01), Kim et al.
patent: 2001/0019863 (2001-09-01), Yang
patent: 2003/0064551 (2003-04-01), Voutsas
patent: 2003/0215973 (2003-11-01), Yamazaki et al.
patent: 2003/0235971 (2003-12-01), Yamazaki et al.
patent: 2004/0060504 (2004-04-01), Takeda et al.
patent: 2004/0076894 (2004-04-01), Hwang
patent: 2004/0135205 (2004-07-01), Jung
patent: 2004/0201019 (2004-10-01), Kim et al.
patent: 2004/0235279 (2004-11-01), Kim
patent: 2004/0266146 (2004-12-01), Jung
patent: 2005/0040148 (2005-02-01), Jung
patent: 2005/0095762 (2005-05-01), Kim
patent: 2005/0139925 (2005-06-01), You
patent: 2005/0142299 (2005-06-01), Kim et al.
patent: 2005/0142450 (2005-06-01), Jung
patent: 2005/0142452 (2005-06-01), You
patent: 2005/0142453 (2005-06-01), Seo et al.
patent: 2005/0173752 (2005-08-01), Chung et al.
patent: 2005/0181136 (2005-08-01), Jung
patent: 2005/0202654 (2005-09-01), Im
patent: 2005/0233511 (2005-10-01), You
patent: 2005/0235903 (2005-10-01), Im et al.
patent: 2005/0271952 (2005-12-01), Jung
patent: 2006/0003506 (2006-01-01), You
patent: 2006/0009016 (2006-01-01), Yamazaki et al.
patent: 2006/0035478 (2006-02-01), You
patent: 2006/0040512 (2006-02-01), Im
patent: 2006/0060130 (2006-03-01), Im
patent: 2006/0065186 (2006-03-01), Kumoni
patent: 2006/0102901 (2006-05-01), Im et al.
patent: 2006/0121369 (2006-06-01), Hwang
patent: 2006/0154154 (2006-07-01), Sun
patent: 08-288194 (1996-11-01), None
patent: 1999-0066360 (1999-08-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Apparatus and method of crystallizing amorphous silicon does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus and method of crystallizing amorphous silicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus and method of crystallizing amorphous silicon will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3945722

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.