Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1992-04-09
1994-05-03
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117954, C30B 2514
Patent
active
053084330
ABSTRACT:
Herein disclosed is a vapor growth system, in which the number of dummy lines is reduced to decrease the number of lines led into a valve system, thereby enabling thin film growth having a good interfacial steepleness. The system comprising gas supplying lines A70, B71 and C72, which are made up of AsH.sub.3 process gas lines A62, B65, C68 and and balance lines A61, B64 and C67, respectively. The balance lines A61, B64 and C.sub.67 contributes equalization of products of the viscosity and the flow rate in the gas supplying lines A70, B71 and C72, and the dummy line 60. Only when AsH.sub.3 (A), AsH.sub.3 (B) and AsH.sub.3 gases are not fed upon formation of the film growth, the dummy line 60 is connected to the main line. Whereby, the system is free from pressure fluctuation of the gas in the main line, with an arrangement of even a single dummy line.
REFERENCES:
patent: 3930908 (1976-01-01), Jolly
patent: 4066481 (1978-01-01), Manasevit et al.
patent: 4368098 (1983-01-01), Manasevit
patent: 4588451 (1986-05-01), Vernon
Matsui Yasushi
Otsuka Nobuyuki
Kunemund Robert
Matsushita Electric - Industrial Co., Ltd.
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