Apparatus and method for treating surfaces of semiconductor...

Details Apparatus and method for treating surfaces of semiconductor... Apparatus and method for treating surfaces of semiconductor...

2007-08-21

2007-08-21

Kornakov, M. (Department: 1746)

Cleaning and liquid contact with solids

Apparatus

With plural means for supplying or applying different fluids...

C134S05600D, C134S094100, C134S102200, C134S137000, C134S149000, C134S157000, C134S198000

Reexamination Certificate

active

11335948

ABSTRACT:
An apparatus and method for treating surfaces of semiconductor wafers with a reactive gas, such as ozone, utilizes streams of gaseous material ejected from a gas nozzle structure to create depressions on or holes through a boundary layer of processing fluid formed on a semiconductor wafer surface to increase the amount of reactive gas that reaches the wafer surface through the boundary layer. The apparatus and method may be used to clean a semiconductor wafer surface and/or grow an oxide layer on the wafer surface by oxidation.

REFERENCES:
patent: 5964952 (1999-10-01), Kunze-Concewitz
patent: 6003527 (1999-12-01), Netsu et al.
patent: 6543462 (2003-04-01), Lewis et al.
patent: 6756308 (2004-06-01), Small et al.
patent: 6860277 (2005-03-01), Lee et al.
patent: 2003/0005948 (2003-01-01), Matsuno et al.

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