Apparatus and method for treating surfaces of semiconductor...

Details Apparatus and method for treating surfaces of semiconductor... Apparatus and method for treating surfaces of semiconductor...

2006-04-04

2006-04-04

Kornakov, M. (Department: 1746)

Cleaning and liquid contact with solids

Processes

Using sequentially applied treating agents

C134S026000, C134S031000, C134S034000, C134S037000, C216S099000

Reexamination Certificate

active

07022193

ABSTRACT:
An apparatus and method for treating surfaces of semiconductor wafers with a reactive gas, such as ozone, utilizes streams of gaseous material ejected from a gas nozzle structure to create depressions on or holes through a boundary layer of processing fluid formed on a semiconductor wafer surface to increase the amount of reactive gas that reaches the wafer surface through the boundary layer. The apparatus and method may be used to clean a semiconductor wafer surface and/or grow an oxide layer on the wafer surface by oxidation.

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