Apparatus and method for treating substrates

Details Apparatus and method for treating substrates Apparatus and method for treating substrates

1991-11-29

1995-01-31

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

156643, 1566591, 118723E, 118723ER, H01L 2100

Patent

active

053856244

ABSTRACT:
A substrates treating apparatus comprising a chamber provided with a section at which a semiconductor wafer is treated and with another section at which plasma is generated. A supplier for supplying mixed gas (O.sub.2 +CF.sub.4) into the plasma generating section in the chamber, high frequency electrodes for changing the gas into plasma, an ion trap for trapping ions in the plasma to send neutral radicals into the wafer treating section, and an exhaust mechanism for exhausting the wafer treating section.

REFERENCES:
patent: 4431898 (1984-02-01), Reinberg et al.
patent: 4828369 (1989-05-01), Hotomi
patent: 4919783 (1990-04-01), Asamaki et al.
patent: 5164034 (1992-11-01), Arai et al.
patent: 5284544 (1994-02-01), Mizutani et al.
Patent Abstracts of Japan, vol. 12, No. 362 (E-663), Sep. 28, 1988, & JP-A-63-116-428, May 20, 1988, T. Harada, et al., "Dry Etching Method".

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