Apparatus and method for thick wafer measurement

Details Apparatus and method for thick wafer measurement Apparatus and method for thick wafer measurement

1993-03-25

1995-01-31

Fields, Carolyn E.

Radiant energy

Invisible radiant energy responsive electric signalling

Infrared responsive

356355, G01B 1106

Patent

active

053861191

ABSTRACT:
The thickness of the entire surface of a thick semiconductor (94) layer on an insulator is determined all at once by dividing the surface into a plurality of pixels, by varying the length of a variable length optical path (110) in a Michelson interferometer (66) having an infrared source (62), illuminating the entire surface of the layer with an image of the IR source during the length variation operation, and by detecting (64) the product of the intensity (I.sub.s (z)) from the Michelson interferometer and the reflectivity R(t) of the layer as the path length is varied, such being indicative of the thickness of the layer, and by determining, for each pixel, which one of a plurality of groups of stored reflectance values, for a corresponding plurality of thicknesses, best matches the detected values, thereby providing a thickness map of the semiconductor layer.

REFERENCES:
patent: 5099122 (1992-03-01), Miki
Cox et al., "Measurement of Si Epitaxial Thickness Using a Michelson Interferometer", J. Electrochem. Soc.: Solid-State Science and Technology, vol. 120, No. 2, Feb. 1973.

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