Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1996-06-18
1998-01-06
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 13, 117208, C30B 1520
Patent
active
057049734
ABSTRACT:
Proposed is an improvement in the method and single crystal growing chamber for the preparation of a single crystal rod of silicon by the Czochralski method, according to which the distance between the surface of the melt of silicon contained in a crucible and the lower surface of the top wall of the crystal growing chamber is equal to or larger than the diameter of the crucible and the heat-insulating cylinder surrounding the crucible containing the melt of silicon and the heater has such a height as to reach the lower surface of the top wall of the chamber so as to keep the single crystal rod under growing is kept at a temperature not lower than 700.degree. C. until reaching the lower surface of the top wall of the chamber thereby decreasing the density of the crystal defects of BMD type in the seed end of the single crystal rod as grown so that the uniformity in the distribution of BMD density is increased throughout the single crystal rod.
REFERENCES:
patent: 3961905 (1976-06-01), Rice
patent: 4158038 (1979-06-01), Jewett
patent: 5264189 (1993-11-01), Yamashita et al.
Ohta Tomohiko
Sakurada Masahiro
Sato Wataru
Garrett Felisa
Shin-Etsu Handotai & Co., Ltd.
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