Apparatus and method for the production of bulk silicon...

Details Apparatus and method for the production of bulk silicon... Apparatus and method for the production of bulk silicon...

2008-01-29

2008-01-29

Kunemund, Robert (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For forming a platelet shape or a small diameter, elongate,...

C117S084000, C117S089000, C117S200000, C117S951000, C118S716000

Reexamination Certificate

active

07323052

ABSTRACT:
An apparatus and method for growing bulk single crystals of silicon carbide is provided. The apparatus includes a sublimation chamber with a silicon vapor species phase outlet that allows the selective passage of atomic silicon vapor species while minimizing the concurrent passage of other vapor phase species. The apparatus can provide control of vapor phase stoichiometry within the sublimation chamber, which in turn can allow the production of bulk silicon carbide single crystals with reduced intrinsic point defects concentration.

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