Apparatus and method for the in-situ generation of dopants

Details Apparatus and method for the in-situ generation of dopants Apparatus and method for the in-situ generation of dopants

1997-08-05

1999-12-14

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

117 99, 117105, 118715, C30B 2514

Patent

active

060011726

ABSTRACT:
A method and apparatus for generating a dopant gas species which is a reaction product of a metal and a gas reactive therewith to form the dopant gas species. A source mass of metal is provided and contacted with the reactive gas to yield a dopant gas species. The dopant gas species may be passed to a chemical vapor deposition reactor, or flowed to an ionization chamber to generate ionic species for ion implantation.

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patent: 5202283 (1993-04-01), Younger et al.
patent: 5250135 (1993-10-01), Moss et al.
patent: 5294285 (1994-03-01), Kanai et al.

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