Apparatus and method for the electrochemical etching of a wafer

Details Apparatus and method for the electrochemical etching of a wafer Apparatus and method for the electrochemical etching of a wafer

1997-11-12

2000-08-15

Mayekar, Kishor

Electrolysis: processes, compositions used therein, and methods

Electrolytic erosion of a workpiece for shape or surface...

Moving tool electrode

205670, 204212, H05K 307, C25D 1700

Patent

active

061030961

ABSTRACT:
An electrochemical etching apparatus and method increasing the rate at which material is removed from a substrate such as a metallic surface. The apparatus includes an electrolyte delivery system positioned below and centered beneath the center of the substrate (e.g., a wafer) to be etched so that the center axis of the delivery system corresponds to the center of the wafer. The electrolyte delivery system and the wafer are then rotated relative to each other as the electrolyte is discharged from the delivery system and toward the surface of the wafer. A corresponding method for electrochemically etching a surface of the wafer with an electrolyte is also provided.

REFERENCES:
patent: 1166378 (1915-12-01), Levy
patent: 1393315 (1921-10-01), Robertson
patent: 2689216 (1954-09-01), Nevers et al.
patent: 2923671 (1960-02-01), Van Tilburg
patent: 3300396 (1967-01-01), Walker
patent: 3317410 (1967-05-01), Croll et al.
patent: 3558464 (1971-01-01), Danna
patent: 3652442 (1972-03-01), Powers et al.
patent: 3808071 (1974-04-01), Lerner
patent: 3809642 (1974-05-01), Bond et al.
patent: 3953276 (1976-04-01), Glorioso et al.
patent: 3962047 (1976-06-01), Wagner
patent: 3986911 (1976-10-01), Lerner
patent: 4032422 (1977-06-01), Ross et al.
patent: 4118303 (1978-10-01), Gibbs
patent: 4233416 (1980-11-01), Rothmayer et al.
patent: 4304641 (1981-12-01), Grandia et al.
patent: 4323438 (1982-04-01), Sesterhenn et al.
patent: 4466864 (1984-08-01), Bacon et al.
patent: 4469564 (1984-09-01), Okinaka et al.
patent: 4596637 (1986-06-01), Kozarkek et al.
patent: 4664760 (1987-05-01), Jarrett
patent: 4906341 (1990-03-01), Yamakawa et al.
patent: 4931150 (1990-06-01), Smith
patent: 4966647 (1990-10-01), Siegmund et al.
patent: 5000827 (1991-03-01), Schuster et al.
patent: 5023044 (1991-06-01), Negron
patent: 5152878 (1992-10-01), Datta et al.
patent: 5222310 (1993-06-01), Thompson et al.
patent: 5228966 (1993-07-01), Murata
patent: 5284554 (1994-02-01), Datta et al.
patent: 5308447 (1994-05-01), Lewis et al.
patent: 5318683 (1994-06-01), Smith et al.
patent: 5377708 (1995-01-01), Bergman et al.
patent: 5391285 (1995-02-01), Lytle et al.
patent: 5421987 (1995-06-01), Tzanavaras et al.
patent: 5429733 (1995-07-01), Ishida
patent: 5431823 (1995-07-01), Gofer
patent: 5435885 (1995-07-01), Jones et al.
patent: 5437777 (1995-08-01), Kishi
patent: 5443707 (1995-08-01), Mori
patent: 5447615 (1995-09-01), Ishida
patent: 5486282 (1996-01-01), Datta et al.
patent: 5543032 (1996-08-01), Datta et al.
patent: 5807165 (1998-09-01), Uzoh et al.
patent: 5865984 (1999-02-01), Corbin, Jr. et al.
patent: 5911619 (1999-06-01), Uzoh et al.
D. Edestein, "Advantages of Copper Interconnectors," Jun. 27-29, 1995, VMIC Conference--1995 ISMIC--104/95/0301 Jun. 1995.
D. Edestein, et al., "Full Copper Wiring in a Sub-0.25 um CMOSULSI Technology," IEEE IEDM, Washington, D.C. Dec. 7-10 (1997) pp. 301-307.
D. Edelstein, "Integration of Copper Interconnects," ECS 1996 Month Not Available.
Equinox, Single Substrate Processing System, Semitool. Advertising Brochure. EQU-025, Apr. 1994 pp. 108.

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