Apparatus and method for test structure inspection

Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element

Reexamination Certificate

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C324S754210

Reexamination Certificate

active

07902849

ABSTRACT:
Herein are described layouts of test structures and scanning methodologies that allow large probe currents to be used so as to allow the detection of resistive defects with a resistance lower than 1 MΩ while at the same time allowing a sufficient degree of localization to be obtained for root cause failure analysis. The detection of resistances lower than 1 MΩ nominally requires a probe current greater than 1 micro ampere for detection on an electron beam inspection system.

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Applied Materials Israel, Ltd., PCT/US2007/060050, International Search Report and Written Opinion, Jul. 3, 2007, 10pp, ISA/EP, European Patent Office.

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