Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate
2007-12-25
2007-12-25
Hiteshew, Felisa (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
C117S013000, C117S208000, C117S214000
Reexamination Certificate
active
11229712
ABSTRACT:
Means for supplying raw material in additional charging or recharging of solid granular raw material into molten material in the crucible, comprises a raw material supply tube to be filled with said material, a metallic support member which runs through the inside of the tube, connects with the bottom lid, and serves for descending the lid and for ascending the tube and the lid, and a configuration avoiding metallic contamination, whereby the lower-end aperture of the tube is opened for charging said material therein into the crucible in uniform circumferential distribution and in large quantity, thus achieving efficient supply operation to be widely applied for growing silicon single crystals.
REFERENCES:
patent: 6277192 (2001-08-01), Altekruger et al.
patent: 6805746 (2004-10-01), Moroishi et al.
patent: 7001456 (2006-02-01), Nakashima et al.
patent: 09-208368 (1997-08-01), None
patent: 11-236290 (1999-08-01), None
patent: WO 02/068732 (2002-09-01), None
Moroishi Manabu
Nakashima Katsunori
Toma Koji
Clark & Brody
Hiteshew Felisa
Sumco Corporation
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