Apparatus and method for submicron pattern generation

Details Apparatus and method for submicron pattern generation Apparatus and method for submicron pattern generation

1979-08-27

1981-07-14

Smith, Ronald H.

Coating processes

Coating by vapor, gas, or smoke

Metal coating

118720, 427282, C23C 1100, C23C 1300

Patent

active

042787106

ABSTRACT:
An apparatus and method are provided for depositing submicron patterns on a substrate. The apparatus includes an evaporative source located opposite the substrate so that molecules from the source can be deposited directly on the substrate. A mask is located between the evaporative source and the substrate, the mask having openings which correspond to the desired pattern to be deposited on the substrate. A plate is located between the mask and the substrate, the plate having an aperture for allowing evaporated molecules to be deposited on the substrate according to the pattern of the mask.

REFERENCES:
patent: 3117025 (1964-01-01), Learn et al.
patent: 3132046 (1964-05-01), Mann
patent: 3326718 (1967-06-01), Dill
patent: 3377697 (1968-04-01), Hobbs
patent: 3719487 (1973-03-01), Schutze et al.
patent: 3772102 (1973-11-01), Tiemann et al.
patent: 3820994 (1974-06-01), Lindberg et al.
patent: 3899996 (1975-08-01), Park
patent: 4004044 (1977-01-01), Franco et al.
patent: 4022932 (1977-05-01), Feng
IBM Technical Disclosure Bulletin, vol. 14, No. 3, pp. 772-773 _"Evaporat Mask for Mask Changing and Registration Under Vacuum" Aug. 1971.
IBM Technical Disclosure Bulletin, vol. 5, No. 1, p. 5, "Vacuum Evaporation Method",Jun. 1962.

Affiliated with

Also associated with

Rating

Apparatus and method for submicron pattern generation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus and method for submicron pattern generation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus and method for submicron pattern generation will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2165018