Etching a substrate: processes – Etching and coating occur in the same processing chamber
Reexamination Certificate
2005-10-28
2008-10-21
Olsen, Allan (Department: 1792)
Etching a substrate: processes
Etching and coating occur in the same processing chamber
C216S055000, C216S062000
Reexamination Certificate
active
07438822
ABSTRACT:
A plasma etching system having a wafer chuck with a magnet that applies a magnetic field over a wafer to shield the wafer from charged particles. The magnetic field is parallel with the wafer, and is strongest near the wafer surface. The magnetic field may be straight, or circular. In operation, electrons are deflected from the wafer by the Lorentz force, the wafer acquires a positive charge, and ions are deflected by electrostatic repulsion. Neutral species are allowed through the magnetic field, and they collide with the wafer. Neutral species generally provide more isotropic and material-selective etching than charged particles, so the present magnetic field tends to increase etch isotropy and material selectivity. Also, the magnetic field can protect the wafer from seasoning processes designed to clean unwanted films from the chamber surface as seasoning processes typically rely on etching by charged particles.
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Chen Bomy A.
Ji Brian L.
Panda Siddhartha
Wise Richard
Yan Hongwen
Cai Yuanmin
International Business Machines - Corporation
Olsen Allan
Whitham Curtis Christofferson & Cook PC
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