Apparatus and method for selectively recessing spacers on...

Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means

Reexamination Certificate

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C438S267000, C438S690000, C438S694000, C438S696000, C438S699000, C438S743000, C438S744000, C438S751000, C438S756000, C438S757000, C438S759000, C438S778000, C438S787000, C438S791000, C257S900000, C257SE21626, C257SE21640

Reexamination Certificate

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07435683

ABSTRACT:
Embodiments of an apparatus and methods for fabricating a spacer on one part of a multi-gate transistor without forming a spacer on another part of the multi-gate transistor are generally described herein. Other embodiments may be described and claimed.

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