Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2006-09-15
2008-10-14
Pham, Thanh V (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S267000, C438S690000, C438S694000, C438S696000, C438S699000, C438S743000, C438S744000, C438S751000, C438S756000, C438S757000, C438S759000, C438S778000, C438S787000, C438S791000, C257S900000, C257SE21626, C257SE21640
Reexamination Certificate
active
07435683
ABSTRACT:
Embodiments of an apparatus and methods for fabricating a spacer on one part of a multi-gate transistor without forming a spacer on another part of the multi-gate transistor are generally described herein. Other embodiments may be described and claimed.
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Doyle Brian S.
Kavalieros Jack T.
Rachmady Willy
Shah Uday
Intel Corporation
Intel Corporation
Nelson Kenneth A.
Pham Thanh V
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