Apparatus and method for repairing resist latent images

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

Reexamination Certificate

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C250S491100, C430S315000

Reexamination Certificate

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06897455

ABSTRACT:
A method and an apparatus for repairing resist latent image on a wafer are disclosed. In the method, an image scanner equipped with a first and a second wafer carrier, and a primary imaging column and a secondary imaging column is utilized to conduct the processes of imaging a resist latent image on a first wafer and repairing a defect in a resist latent image on a second wafer positioned on a second wafer carrier simultaneously. The primary imaging column and the secondary imaging column may be situated in the same vacuum chamber to facilitate operation.

REFERENCES:
patent: 5504339 (1996-04-01), Masuda
patent: 5725995 (1998-03-01), Leedy
patent: 6703626 (2004-03-01), Takaoka et al.

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