Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2011-08-30
2011-08-30
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S773000, C257SE23067, C257SE23145
Reexamination Certificate
active
08008781
ABSTRACT:
An apparatus and method, the apparatus includes an electronic chip package including an electronic chip having a first contact pad and a second contact pad thereon and being free of an intervening contact pad therebetween, a first dielectric layer coupled to the electronic chip over the first and second contact pads, and a second dielectric layer coupled to the first dielectric layer such that a dielectric layer boundary is formed therebetween. The first dielectric layer has a first contact pad via formed therethrough at a first location corresponding to the first contact pad and extending down thereto. The second dielectric layer has a second contact pad via formed therethrough at a second location corresponding to the second contact pad and extending down thereto such that a second contact pad multi-layer via is formed through the first and second dielectric layers at the second location corresponding to the second contact pad.
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Durocher Kevin M.
Fillion Raymond Albert
McConnelee Paul Alan
Saia Richard Joseph
General Electric Company
Huynh Andy
Testa Jean K.
Ziolkowski Patent Solutions Group, SC
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