Thermal measuring and testing – Temperature measurement – In spaced noncontact relationship to specimen
Reexamination Certificate
2008-04-17
2010-11-23
Verbitsky, Gail (Department: 2855)
Thermal measuring and testing
Temperature measurement
In spaced noncontact relationship to specimen
C374S178000, C374S124000, C324S765010
Reexamination Certificate
active
07837383
ABSTRACT:
The invention is an optical method and apparatus for measuring the temperature of semiconductor substrates in real-time, during thin film growth and wafer processing. Utilizing the nearly linear dependence of the interband optical absorption edge on temperature, the present method and apparatus result in highly accurate measurement of the absorption edge in diffuse reflectance and transmission geometry, in real time, with sufficient accuracy and sensitivity to enable closed loop temperature control of wafers during film growth and processing. The apparatus operates across a wide range of temperatures covering all of the required range for common semiconductor substrates.
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“A New Optical Temperature Measurement Technique for Semiconductor Substrates in Molecular Beam Epitaxy,” by M. K. Weilmeier et al., Department of Physics and Electrical Engineering, University of British Columbia, Canada (Can. J. Phys. 69, 422 (1991), 5 pages.
Barlett Darryl
Clarke Roy
Perry Douglas
Taylor, II Charles A.
Williams Jason
Dickinson Wright PLLC
k-Space Associates, Inc.
Verbitsky Gail
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