Radiant energy – Invisible radiant energy responsive electric signalling – With means to inspect passive solid objects
Patent
1993-07-07
1995-04-11
Hannaher, Constantine
Radiant energy
Invisible radiant energy responsive electric signalling
With means to inspect passive solid objects
250308, G01N 2300, G01N 2318
Patent
active
054060850
ABSTRACT:
A method and apparatus for rapidly yet nondestructively testing a semiconductor wafer is disclosed. A multi-spot positron source assembly directs positrons over an entire semiconductor wafer at one time. A pair of multi-detector assemblies are situated so that each detector within an assembly corresponds physically with a positron source. By measuring the characteristic emission and annihilation energies, the multi-detector assembly pair is capable of detecting the lifetimes of positrons from within each of the areas simultaneously. Longer lifetimes are indicative of defects within the semiconductor wafer. By accumulating and analyzing positron lifetimes from across the entire wafer substantially simultaneously, information about the existence and location of defects in the wafer may be more rapidly determined than is possible with known positron-emission techniques.
REFERENCES:
patent: 3593025 (1971-07-01), Grosskreutz
patent: 3970855 (1976-07-01), Holt et al.
patent: 4064438 (1977-12-01), Alex et al.
patent: 4652757 (1987-03-01), Carver
patent: 4740694 (1988-04-01), Nishimura et al.
patent: 4864131 (1989-09-01), Rich et al.
patent: 4897549 (1990-01-01), Zerda et al.
patent: 5077475 (1991-12-01), Moriya et al.
patent: 5200619 (1993-04-01), Kumar et al.
S. Dannefaer, "A Systematic Study of Positron Lifetimes in Semiconductors," J. Phys. C.: Solid State Phys., vol. 15, pp. 599-605 (1982).
G. Dlubek and R. Krause, "Positron Studies of Defects in III-V Semiconductor Compounds," Phys. Stat. Sol., vol. 102, pp. 443-479 (1987).
P. Kirkegaard et al., "Program System for Analysing Positron Lifetime Spectra and Angular Correlation Curves," Computer Physics Communications, vol. 23, pp. 307-355 (1981).
S. C. Sharma, N. Hozhabri, and R. C. Hyer, "A Study of Defects in Czochralski-Grown Silicon by Positron Annihilation Spectroscopy," 262 Mat. Res. Soc. Symp. Proc. pp. 45-50 (1992).
S. C. Sharma et al., "Depth and Radial Profiles of Defects in Czochralski-Grown Silicon," 61 Appl. Phys. Lett. pp. 1939-1941 (Oct., 1992).
Board of Regents , The University of Texas System
Glick Edward J.
Hannaher Constantine
LandOfFree
Apparatus and method for rapid and nondestructive determination does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Apparatus and method for rapid and nondestructive determination , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus and method for rapid and nondestructive determination will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1540248