Abrading – Abrading process – Glass or stone abrading
Reexamination Certificate
2000-04-26
2003-05-13
Rachuba, M. (Department: 3723)
Abrading
Abrading process
Glass or stone abrading
C451S287000, C451S288000
Reexamination Certificate
active
06561875
ABSTRACT:
BACKGROUND OF THE INVENTION AND RELATED ART STATEMENT
The present invention relates to a method and apparatus for producing a substrate whose surface includes a metallic wire, by polishing the substrate surface.
JP-A-2-278822 discloses a polishing method using a polishing liquid including an etching liquid and abrasive power to polish a substrate chemically and mechanically. JP-A-8-83780 discloses a polishing method using a polishing liquid including an etching liquid to polish a substrate chemically and mechanically. JP-A-9-306881 discloses a polishing method using a polishing liquid including an etching liquid without abrasive powder to polish a substrate chemically and mechanically. JP-A-10-125880 discloses a polishing method using a polishing liquid including an alkaline etching liquid without abrasive powder to polish a substrate chemically and mechanically. JP-A-8-64562 and A new Slurry-free CMP Technique for Cu Interconnects published on Semi-Technology Symposium 1998 disclose a polishing method using a polishing pad including abrasive powder and a polishing liquid without abrasive powder to polish a substrate. The publication of U.S. Pat No. 5,597,341 discloses a structure for detecting a frictional force between a polishing pad and a substrate during polishing by measuring a polishing pad rotational driving force and a substrate rotational driving force.
OBJECT AND SUMMARY OF THE INVENTION
An object of the present invention is to provide a method and apparatus for producing a substrate whose surface includes a metallic wire by polishing the substrate surface, in which method and apparatus a decrease of a frictional coefficient between a substrate surface and a polishing pad surface or a polishing depth increasing velocity in accordance with an increase of a relative movement velocity between the polishing pad surface and the substrate surface to be polished by the polishing pad surface is restrained. The frictional coefficient between the substrate surface and the polishing pad surface is determined in the present invention as (a measured frictional force therebetween/a pressing force applied therebetween).
In the present invention for producing a substrate whose surface includes a metallic wire by polishing the substrate surface,
a polishing liquid is supplied into a clearance between the substrate surface and a polishing pad surface of a polishing pad, which polishing liquid includes an acid for dissolving an oxidized part of the substrate surface and is prevented substantially from including solid abrasive powder, and
a relative movement is generated between the substrate surface and the polishing pad surface while pressing the substrate surface against the polishing pad surface with the polishing liquid between the substrate surface and the polishing pad surface so that the dissolved oxidized part of the substrate surface is removed from the substrate.
Since the polishing liquid which, includes the acid for dissolving the oxidized part of the substrate surface and is prevented substantially from including solid abrasive powder is used to polish the substrate surface, a viscosity of the polishing liquid is kept small while preventing an increase in number of defects on the substrate surface by the abrasive powder so that the decrease of the frictional coefficient between the substrate surface and the polishing pad surface or a polishing depth increasing velocity in accordance with an increase of a relative movement velocity between a polishing pad surface and the substrate surface to be polished by the polishing pad surface is restrained. The polishing liquid may further include an oxidizing agent (including, for example, hydrogen peroxide, phosphoric acid, nitric acid, or the like) for oxidizing a part of the substrate surface so that the part of the substrate surface becomes brittle, a protective film forming agent (including, for example, benzotriazole (BTA), a derivative of benzotriazole or the like) for forming a protective film on the substrate surface so that an oxidizing proceeding on a bottom part of a substrate surface micro-shape of roughness by the oxidizing agent is restrained, and a surfactant for chemical stability of the polishing liquid. A main component of the polishing pad is, for example, foamed polyurethane polymer, foamed fluoro-carbon polymer or the like.
If the oxidized part of the substrate surface is dissolved in the polishing liquid, and the polishing liquid in which a concentration of the dissolved oxidized part of the substrate surface is smaller than a concentration of the dissolved oxidized part of the substrate surface in the polishing liquid on the polishing pad surface is added and supplied into the polishing liquid on the polishing pad surface so that a concentration of the dissolved oxidized part of the substrate surface in the polishing liquid to be supplied to the clearance between the substrate surface and the polishing pad surface is decreased, a dissolution, diffusion or removal of the oxidized part of the substrate surface from the polishing pad surface and/or the substrate is accelerated so that a decrease of frictional coefficient between the polishing pad surface and the substrate surface or of polishing depth increasing velocity is restrained although a floating force between the substrate surface and the polishing pad surface increases in accordance with the increase of relative movement velocity between the polishing pad surface and the substrate surface.
If the relative movement between the substrate surface and the polishing pad surface is being generated when the polishing liquid in which the concentration of the dissolved oxidized part of the substrate surface is smaller than the concentration of the dissolved oxidized part of the substrate surface in the polishing liquid on the polishing pad surface is added and supplied into the polishing liquid on the polishing pad surface, both of the supply of the polishing liquid in which the concentration of the dissolved oxidized part of the substrate surface is smaller than the concentration of the dissolved oxidized part of the substrate surface in the polishing liquid on the polishing pad surface into the polishing liquid on the polishing pad surface and the removal of the oxidized part of the substrate surface from the substrate surface and/or polishing pad surface are simultaneously performed with the relative movement so that the dissolution, diffusion or removal of the oxidized part of the substrate surface from the polishing pad surface and/or the substrate is accelerated to restrain the decrease of frictional coefficient between the polishing pad surface and the substrate surface or of polishing depth increasing velocity.
If the substrate surface is prevented from contacting the polishing pad surface when the polishing liquid in which the concentration of the dissolved oxidized part of the substrate surface is smaller than the concentration of the dissolved oxidized part of the substrate surface in the polishing liquid on the polishing pad surface is added and supplied into the polishing liquid on the polishing pad surface, the concentration of the dissolved oxidized part of the substrate surface is effectively decrease over a large area of the polishing pad surface without being obstructed by the substrate surface.
It is effective for decreasing the concentration of the dissolved oxidized part of the substrate surface in the polishing liquid on the polishing pad surface that the polishing liquid in which the concentration of the dissolved oxidized part of the substrate surface is smaller than the concentration of the dissolved oxidized part of the substrate surface in the polishing liquid on the polishing pad surface is prevented substantially from including the dissolved oxidized part of the substrate surface.
If the polishing liquid is stirred in a direction perpendicular to a direction of the relative movement so that the concentration of dissolved oxidized part of the substrate surface in the polishing liquid is made uniform in the direction perpendicular to
Hom-ma Yoshio
Imai Toshinori
Ohashi Naofumi
Sakuma Noriyuki
Mattingly Stanger & Malur, P.C.
Rachuba M.
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