Chemistry: electrical and wave energy – Processes and products – Vacuum arc discharge coating
Patent
1981-04-03
1983-11-22
Rutledge, L. Dewayne
Chemistry: electrical and wave energy
Processes and products
Vacuum arc discharge coating
204192N, 204298, C23C 1500
Patent
active
044167555
ABSTRACT:
Apparatus and method for producing semiconducting films on a substrate in a vacuum chamber comprising a plasma generator, means for directing and accelerating an ion beam from the plasma to a sputtering target also contained within the vacuum chamber. A shield means having a low sputtering efficiency compared to the sputtered target is placed in the vacuum chamber between stray ion beams and the vacuum chamber surface and any implements to intercept stray or deflected ion beams and thereby minimize sputtering of the vacuum chamber and implements by the plasma which in turn minimizes the material of which the vacuum chamber and implements are made being present as impurities in the newly formed film. In a preferred embodiment amorphous silicon films are prepared with a ion beam containing a reactive gas which passivates the dangling bonds in silicon film.
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Ceasar Gerald P.
Grimshaw Scott F.
Kastler S.
Rutledge L. Dewayne
Xerox Corporation
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