Apparatus and method for producing high purity diamond films at

Details Apparatus and method for producing high purity diamond films at Apparatus and method for producing high purity diamond films at

1990-04-02

1991-01-01

Nguyen, Nam X.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

20429805, 427 38, 427 47, 118723, C23C 1400

Patent

active

049815687

ABSTRACT:
Apparatus and method for producing diamond films. A source of free electrons is used to bombard a carbon block. Incident electrons vaporize the carbon surface, and free carbon atoms are ionized from collisions of the electrons with the carbon atoms. A collimating plate located above the carbon block includes an aperture for permitting the vaporized carbon ions to be collimated. On the other side of the collimating plate are first and second deflector plates, symmetrical with respect to the axis of the collimating plate aperture. A voltage potential therebetween produces an electrostatic field perpendicular to the axis of the aperture. Substrates located in the electrostatic field receive a carbon ion film which is essentially a diamond film structure.

REFERENCES:
patent: 3117022 (1964-01-01), Bronson et al.
patent: 3961103 (1976-01-01), Aisenberg
patent: 4191735 (1980-03-01), Nelson et al.
patent: 4486286 (1984-12-01), Lewin et al.
patent: 4490229 (1984-12-01), Mirtich et al.
patent: 4504519 (1985-03-01), Zelez
patent: 4725345 (1988-02-01), Sakamoto et al.
"New Era of Technology . . . Process", New York Times, Sep. 14, 1986.

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