Coating apparatus – Gas or vapor deposition
Patent
1998-12-03
2000-08-22
Meeks, Timothy
Coating apparatus
Gas or vapor deposition
156345, 55312, C23C 1600
Patent
active
061066265
ABSTRACT:
An apparatus and a method for preventing contamination to a low pressure chemical vapor deposition chamber (LPCVD) are provided. The apparatus includes an exhaust-vent device which is connected to a vent outlet and a vacuum pump on a process chamber in parallel with and bypassing a gate valve such that the exhaust-vent remains open during a continuous pumping of the process chamber for wafer loading and unloading. The exhaust-vent device is constructed by two end conduits that have a larger diameter connected by a middle conduit that has a smaller diameter such that during vacuum evacuation, the fluid flow rate in the smaller diameter conduit is at least four times that in the large conduit to effectively prevent the deposition in the small conduit of reaction by-products. The present invention apparatus may further be enhanced by mounting heating tapes on the vacuum conduits and heating the conduits to a temperature of between about 100.degree. C. and about 180.degree. C. to further prevent the deposition of contaminating particles on the interior walls of the conduits.
REFERENCES:
patent: 4906257 (1990-03-01), Fukunaga et al.
patent: 4910042 (1990-03-01), Hokynar
patent: 5888579 (1999-03-01), Lun
Guan Kun-lin
Liu Wei-jen
Wu Jin-lang
Hassanzadeh Parviz
Meeks Timothy
Taiwan Semincondutor Manufacturing Company, Ltd
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