Apparatus and method for preparing a single crystal

Details Apparatus and method for preparing a single crystal Apparatus and method for preparing a single crystal

1995-10-10

1996-11-26

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 34, 117222, C30B 1520

Patent

active

055781233

ABSTRACT:
Apparatus for preparing a single crystal made of silicon is according to Czochralski method, which includes a tubular to the conical body which shields the growing single crystal and divides the receiver chamber above the melt into an inner portion and an outer portion, the body having at least one orifice through which inert gas which is conducted into the inner portion of the receiver chamber is able to pass directly into the outer portion of the receiver chamber. The method for preparing a single crystal made of silicon is in accordance with the Czochralski method, wherein a portion of an inert gas stream is conducted through at least one orifice in the tubular to conical body from the inner portion into the outer portion of the receiver chamber.

REFERENCES:
patent: 4330361 (1982-05-01), Kuhn-Kuhnenfeld et al.
patent: 4330362 (1982-05-01), Zulehner
patent: 4956153 (1990-09-01), Yamagishi et al.
patent: 5152867 (1992-10-01), Kitaura et al.
patent: 5361721 (1994-11-01), Takano et al.
patent: 5363796 (1994-11-01), Kobayashi et al.

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