Apparatus and method for plasma-processing

Coating apparatus – Gas or vapor deposition – With treating means

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118728, 427573, C23C 1600

Patent

active

056955669

ABSTRACT:
In a plasma processing apparatus having an upper electrode and a lower electrode in a vacuum chamber, a substrate receiving face of the lower electrode is formed to have a same convex surface as a deflected face of a substrate on condition that surface of the substrate is freely supported on an circumference thereof, and a uniform pressure is applied to the back of the substrate.

REFERENCES:
patent: 4842683 (1989-06-01), Cheng et al.
patent: 4931135 (1990-06-01), Horiuchi et al.
patent: 4978412 (1990-12-01), Aoki et al.
patent: 5013400 (1991-05-01), Kurasaki et al.
patent: 5096536 (1992-03-01), Cathey, Jr.
patent: 5494522 (1996-02-01), Moriya et al.
patent: 5494523 (1996-02-01), Steger et al.

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