Apparatus and method for plasma-assisted etching of wafers

Details Apparatus and method for plasma-assisted etching of wafers Apparatus and method for plasma-assisted etching of wafers

1981-08-24

1983-08-09

Demers, Arthur P.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

156345, 156643, 204298, C23C 1500

Patent

active

043977243

ABSTRACT:
In a plasma-assisted etching apparatus and method, surfaces in the reaction chamber are covered with a layer of a polyarylate polymer. Contamination of wafers during the etching process is thereby substantially reduced. In practice, this leads to a significant increase in the yield of acceptable chips per wafer.

REFERENCES:
patent: 2594243 (1971-07-01), Deutsch et al.
patent: 3627599 (1971-12-01), Goldmacher
patent: 4025411 (1977-05-01), Hom-ma et al.
patent: 4126712 (1978-11-01), Poliniak
patent: 4153741 (1979-05-01), Poliniak et al.
patent: 4268374 (1981-05-01), Lepselter
patent: 4278753 (1981-07-01), Lewis et al.
patent: 4333793 (1982-06-01), Lifshitz et al.
Petrak, IBM Tech. Disc. Bull., 20 (1977), p. 1176.
Sonn et al., Rev. Sci. Inst., 42 (1971), pp. 1076-1077.
Bowden et al., J. Elect. Soc., 121 (1974), pp. 1620-1623.

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