Apparatus and method for performing thin film layer thickness me

Details Apparatus and method for performing thin film layer thickness me Apparatus and method for performing thin film layer thickness me

1992-06-29

1994-03-01

Turner, Samuel A.

Optics: measuring and testing

By dispersed light spectroscopy

Utilizing a spectrometer

356357, 356360, G01B 902

Patent

active

052912698

ABSTRACT:
An apparatus (1) that measures the thickness of a thin film layer of a wafer (24), includes an extended light source that forms a diffuse polychromatic light beam. The extended light source includes a halogen lamp (10), a fiber optic light guide (12), a ground glass screen (19), and a condenser lens (16). The diffuse polychromatic light beam generated by this extended light source illuminates an entire surface of the wafer (24). The diffuse polychromatic light beam is reflected off the wafer (24) and passed through a spatial filter (26, 28) and a spectral filter (37, 38) so as to form a monochromatic light beam that is projected onto a detector array (31) of a charge coupled device (CCD) camera (30). The monochromatic light beam displays an interference fringe pattern image on the CCD camera detector array (31) which is the result of coherent interactions in the diffuse polychromatic light beam as it is reflected within the wafer structure (24). The interference fringe pattern image displayed on the CCD camera detector array (31) is captured by the CCD camera (30). The captured image is then converted to a map of measured reflectance data by a digitizing circuit (34) and a computer (36). This map of measured reflectance data is then compared to reference reflectance data to generate a map of the thin film layer thickness over a full aperture of the wafer (24).

REFERENCES:
patent: 4909631 (1990-03-01), Tan et al.
patent: 5042949 (1991-08-01), Greenberg et al.

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