Apparatus and method for partial ion implantation

Details Apparatus and method for partial ion implantation Apparatus and method for partial ion implantation

2007-12-17

2010-06-01

Wells, Nikita (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492200, C250S492300, C250S492100, C250S42300F, C250S3960ML, C315S111810, C315S111610

Reexamination Certificate

active

07728312

ABSTRACT:
An apparatus and method for partial ion implantation, which desirably provide control over the energy of the implanted dopants, generally includes an ion beam generator, and first and second deceleration units. The first deceleration unit decelerates the energy of an ion beam generated by the ion beam generator; and a subsequent, second deceleration unit further decelerates the energy into different energy levels according to regions of a wafer into which the ions are to be implanted.

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