Amplifiers – With semiconductor amplifying device – Including class d amplifier
Patent
1987-05-26
1988-03-22
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including class d amplifier
330276, 330277, 330285, 330295, 330300, H03F 326, H03F 368
Patent
active
047331941
ABSTRACT:
Switching power amplifier circuits for use in a frequency range from 0.5 MHz to 100 MHz are described. The power amplifier circuits have power field effect transistor (FET) devices as output components and the FET devices are driven by bipolar transistor devices without frequency limiting components. The power amplifier circuits can be coupled in parallel and the coupled amplifier circuits can be operated in a push-pull mode of operation for increased power. The systems using these amplifier devices can operate in a Class A, B, C, D, E, F and S modes. In particular, a Class D amplifier system is described that uses the switching power amplifier circuits in the extended frequency range.
REFERENCES:
patent: 3443241 (1969-05-01), Pitzalis, Jr.
patent: 4275359 (1981-06-01), Yoshida et al.
patent: 4535298 (1985-08-01), Covill
Ikeda, "Development of a Solid State Radio Transmitter with MOS/FET", IEEE Transactions on Broadcasting, vol. BC-26, No. 4, Dec. 1980, pp. 99-112.
Raab, "Radio Frequency Pulsewidth Modulation", IEEE Transactions on Communications, Aug. 1973, pp. 958-966.
Granberg Helge O.
Roehrs Don P.
Holloway William W.
Mullins James B.
Signal One Corporation
LandOfFree
Apparatus and method for paralleling power field effect transist does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Apparatus and method for paralleling power field effect transist, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus and method for paralleling power field effect transist will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-444479