Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Outside periphery of package having specified shape or...
Reexamination Certificate
2005-05-17
2005-05-17
Parekh, Nitin (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Outside periphery of package having specified shape or...
C257S690000, C257S692000, C257S693000, C257S773000, C257S786000, C257S787000, C257S723000, C257S620000
Reexamination Certificate
active
06894386
ABSTRACT:
Methods for forming an edge contact on a die and edge contact structures are described. The edge contacts on the die do not increase the height of the die. The edge contacts are positioned on the periphery of a die. The edge contacts are positioned in the saw streets. Each edge contact is connected to one bond pad of each die adjacent the saw street. The edge contact is divided into contacts for each adjacent die when the dies are separated. In an embodiment, a recess is formed in the saw street. In an embodiment, the recess is formed by scribing the saw street with a mechanical cutter. The recess is patterned and contact material is deposited to form the edge contacts.
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Chung So Chee
Jeung Boon Suan
Koon Eng Meow
Kwang Chua Swee
Leng Ser Bok
Parekh Nitin
Schwegman Lundberg Woessner & Kluth P.A.
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