Semiconductor device manufacturing: process – With measuring or testing
Reexamination Certificate
2005-02-01
2005-02-01
Everhart, Caridad (Department: 2825)
Semiconductor device manufacturing: process
With measuring or testing
C438S016000, C438S482000
Reexamination Certificate
active
06849470
ABSTRACT:
A top surface of a wafer is provided with an n-type source region, an n-type drain region, and an n-type semiconductor region. Dry etching using a plasma is performed with respect to an interlayer insulating film deposited on the wafer to form openings reaching the respective regions, followed by light etching for removing a damaged layer. In this case, exciting light is supplied intermittently to the n-type semiconductor region. The progression of the removal of the damaged layer and the stage of development of a newly damaged layer are sensed by monitoring the change rate of the intensity of reflected probe light in the presence and absence of the exciting light, resulting in the formation of a semiconductor device having low and equal contact resistance. In-line control using optical evaluation enables the implementation of semiconductor devices with excellent and consistent properties.
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Eriguchi Koji
Okuyama Masanori
Yamada Takayuki
Everhart Caridad
Matsushita Electric - Industrial Co., Ltd.
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