Apparatus and method for non-invasive measurement of electrical

Electricity: measuring and testing – Impedance – admittance or other quantities representative of... – Lumped type parameters

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324158D, G01R 2714

Patent

active

050235613

ABSTRACT:
An apparatus and method for measurement of electrical properties of a dielectric layer on a semiconductor wafer body is disclosed. The apparatus supports the semiconductor wafer body in position and two electrical contacts are utilized, one of which is a probe tip having a uniformly flat contact portion. Means are provided for establishing a planar contact between the flat contact portion of the probe tip and the dielectric layer of the semiconductor wafer. Measurements of the electrical properties of the dielectric layer can then be made without the use of patterned mesas.

REFERENCES:
patent: 3628137 (1971-12-01), Mazur
patent: 3995216 (1976-11-01), Yin
patent: 4325025 (1982-04-01), Corcoran et al.

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