Apparatus and method for neutralizing the beam in an ion implant

Details Apparatus and method for neutralizing the beam in an ion implant Apparatus and method for neutralizing the beam in an ion implant

1980-07-30

1982-11-30

Smith, Alfred E.

Radiant energy

Electrically neutral molecular or atomic beam devices and...

2504922, 378160, H01J 37317

Patent

active

043617620

ABSTRACT:
An ion implanter apparatus is described with provision for neutralizing the space charge potential of the ionic beam with a closed loop feedback system responding to the electrical charges that tend to accumulate on a target specimen. Neutralization is provided by a controllable electron source surrounding the beam. Flow of electrons to a plate radially outward of the electron source is used to derive a signal proportional to the beam ion current when the space charge potential of the beam is neutralized. The beam current signal can be used (1) to provide a read-out display for the operator; (2) to control the magnitude of the ion beam; (3) to be integrated to determine the total positive charge that enters the Faraday cage of the implanter for use to control the ion beam shutter; or (4) to effect relative movement of the specimen and the beam.

REFERENCES:
patent: 3665185 (1972-05-01), Goff
patent: 3778626 (1973-12-01), Robertson
patent: 3908183 (1975-09-01), Ennis, Jr.
patent: 4120700 (1978-10-01), Morimoto
patent: 4135097 (1979-01-01), Forneris
patent: 4278890 (1981-07-01), Gruen et al.
"High Production Semiconductor Processing at High Levels with High Reliability", brochure, Varian, Extrion Div., Gloucester, Mass., undated.

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