Apparatus and method for monitoring and controlling crystal...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state

Reexamination Certificate

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C117S014000, C117S015000, C117S200000, C117S900000

Reexamination Certificate

active

07959732

ABSTRACT:
Apparatus and method for growing a crystal from a melt of a growth material, wherein crystal growth occurs at a solid-liquid interface between the melt and the crystal, and a characteristic of the solid-liquid interface is determined by using a float atop the melt and a detector for detecting displacement of the float. The characteristic of the solid-liquid interface can be at least one of the following: position, velocity or acceleration of the solid-liquid interface.

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Engineering Science & Mechanics Nontechnical Abstract of MS Theses:2004, http://www.esm.psu.edu/˜ax14/lakhtakia/NontechnicalAbstracts/MS-2004.html, downloaded on Mar. 6, 2006.

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