Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Reexamination Certificate
2011-06-14
2011-06-14
Kunemund, Robert M (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
C117S014000, C117S015000, C117S200000, C117S900000
Reexamination Certificate
active
07959732
ABSTRACT:
Apparatus and method for growing a crystal from a melt of a growth material, wherein crystal growth occurs at a solid-liquid interface between the melt and the crystal, and a characteristic of the solid-liquid interface is determined by using a float atop the melt and a detector for detecting displacement of the float. The characteristic of the solid-liquid interface can be at least one of the following: position, velocity or acceleration of the solid-liquid interface.
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Buzniak Jan Jozef
Prunier Valery
Kunemund Robert M
Renner , Otto, Boisselle & Sklar, LLP
Saint-Gobain Ceramics & Plastics, Inc.
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