Apparatus and method for measuring thickness of thin semiconduct

Details Apparatus and method for measuring thickness of thin semiconduct Apparatus and method for measuring thickness of thin semiconduct

1995-10-11

1996-12-24

Gonzalez, Frank

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356346, 356357, 356361, 25055927, G01B 902

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055877923

ABSTRACT:
An interference waveform dispersion spectrum of light reflected from a multi-layer film is compared to a waveform obtained by numerical calculation using an optical characteristic matrix. Respective layer thickness values obtained from the calculated analysis of the Spatial interference waveform are subjected to waveform fitting with actually measured values. The theoretical interference spectrum is recalculated while changing approximate values of the layer thicknesses until a match is obtained to obtain precise respective layer thicknesses. The thicknesses of respective layers of a thin multi-layer film of submicron thicknesses can be non-destructively measured exactly and stably without direct contact.

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Case et al., "Transparent Film Thickness Measurement", IBM Technical Disclosure Bulletin, vol. 24, No. 1A, Jun. 1981, pp. 49-54.
"Film Thickness Mapping System", Solid State Technology, vol. 34, 1991, pp. 57 and 59.

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