X-ray or gamma ray systems or devices – Specific application – Diffraction – reflection – or scattering analysis
Patent
1997-02-10
1998-06-16
Church, Craig E.
X-ray or gamma ray systems or devices
Specific application
Diffraction, reflection, or scattering analysis
378 71, G01N 23207
Patent
active
057683352
ABSTRACT:
An apparatus and method for measuring the misorientation of a polished surface of a single crystal wafer with respect to a set of low index crystal planes utilizes both an optical beam and an X-ray beam that are directed along the same axis at the wafer. The optical beam is reflected by the polished surface of the wafer, but the X-ray beam penetrates the surface and is diffracted by the low index crystal planes located below the surface. The separation between the diffracted and reflected beams is measured with a detection device. The separation between the reflected and diffracted beams is an indication of the magnitude and sense of the misorientation between the surface and the crystal planes.
REFERENCES:
patent: 5187729 (1993-02-01), Ibe et al.
Duane O. Townley, Optimum Crystallographic Orientation For Silicon Device Fabrication, Solid State Technology, pp. 43-47, Jan. 1973.
Kurt E. Petersen, Silicon as a Mechanical Material, Proceedings of the IEEE, vol. 70, No. 5, pp. 420-457, May 1982.
Brian Tuck, Review -The Chemical Polishing of Semiconductors, Journal of Materials Science 10, pp. 321-339, 1975.
Church Craig E.
Lucent Technologies - Inc.
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