Measuring and testing – Gas analysis – Detector detail
Patent
1995-10-20
1997-02-11
Raevis, Robert
Measuring and testing
Gas analysis
Detector detail
73 2331, G01N 700
Patent
active
056023260
ABSTRACT:
A metal oxide semiconductor element is arranged in a measuring chamber in which an atmosphere is introduced. A resistance of the metal oxide semiconductor element is varied corresponding to a concentration of a specific gas component. An oxygen pump, having a solid-electrolyte element with an oxygen ion transmitting property and a pair of electrodes arranged on both sides of the solid-electrolyte element, is provided. One electrode of the oxygen pump is arranged in the measuring chamber. The measuring chamber is communicated with the atmosphere through a hole as a gas diffusion resistant means. A resistance of the metal oxide semiconductor element is measured when the metal oxide semiconductor element is exposed in the atmosphere so as to obtain a concentration of a specific gas component, while an oxygen partial pressure in the measuring chamber is controlled by the oxygen pump.
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patent: 3932807 (1976-01-01), Wilson
patent: 5217692 (1993-06-01), Rump et al.
patent: 5460711 (1995-10-01), Riegel et al.
patent: 5476001 (1995-12-01), Hoetzel et al.
patent: 5505837 (1996-04-01), Friese et al.
Kato Nobuhide
Katsuda Yuji
Murase Takao
Takahashi Tomonori
Yoshida Toshihiro
NGK Insulators Ltd.
Politzer Jay L.
Raevis Robert
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