Semiconductor device manufacturing: process – Including control responsive to sensed condition – Optical characteristic sensed
Patent
1998-07-21
1999-11-23
Powell, William
Semiconductor device manufacturing: process
Including control responsive to sensed condition
Optical characteristic sensed
156345, 438714, H01L 2100
Patent
active
059899298
ABSTRACT:
A reactor is composed of a lower frame of a chamber, a quartz dome, an upper electrode, an 0 ring, and the like. A lower electrode and a substrate as a workpiece to be processed thereon are disposed in the reactor. The temperature of the quartz dome is maintained at a temperature of 180.degree. C. or higher by means of a heater. Fluorocarbon gas such as C.sub.2 F.sub.6 gas or C.sub.4 F.sub.8 gas is introduced into the reactor through a gas inlet and RF power from a first RF power source is applied to an antenna coil to produce a plasma and thereby etch an oxide film on the substrate. By heating the quartz dome to a high temperature, a deposit which hinders the release of oxygen from a wall face is prevented from being attached and the deposit on the bottom of the hole which causes an etch stop during processing is removed with oxygen. This prevents the etch stop during an etching process for forming a deep hole.
REFERENCES:
patent: 5593539 (1997-01-01), Kubota et al.
patent: 5770097 (1998-06-01), O'Neill et al.
K. Kiozawa et al., "SiO.sub.2 Etching in C.sub.4 F.sub.8 /O.sub.2 ECR Plasma", Proc. of 1995 Dry Process Symposium, VIII-7, pp. 255-260, 1995.
Bito Yoji
Imai Shin-ichi
Jiwari Nobuhiro
Matsumoto Shoji
Nakagawa Satoshi
Matsushita Electronics Corporation
Powell William
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