Apparatus and method for manufacturing a semiconductor device

Details Apparatus and method for manufacturing a semiconductor device Apparatus and method for manufacturing a semiconductor device

1996-09-13

1999-07-27

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

118715, 118725, C23C 1600

Patent

active

059284285

ABSTRACT:
Apparatus and method for manufacturing a semiconductor device in which silicon oxide films are formed using TEOS gas. Thereafter, oxygen gas containing ozone or oxygen radicals is introduced to a chamber and exhausted through a heated exhaust pipe. The stability of thickness of the silicon oxide films are enhanced.

REFERENCES:
patent: 4124467 (1978-11-01), Pincon
patent: 4608063 (1986-08-01), Kurokawa
patent: 5000113 (1991-03-01), Wang
patent: 5462899 (1995-10-01), Ikeda
patent: 5484749 (1996-01-01), Maeda
patent: 5500256 (1996-03-01), Watabe

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