Apparatus and method for lowering the potential barrier across t

Details Apparatus and method for lowering the potential barrier across t Apparatus and method for lowering the potential barrier across t

1998-08-17

1999-11-02

Nguyen, Tan T.

Static information storage and retrieval

Floating gate

Particular biasing

36518503, 36518523, 36518528, G11C 1600

Patent

active

059782692

ABSTRACT:
An EPROM or flash memory cell is programmed to store two or more bits of information by applying one of a plurality of programming voltages to the control gate of the memory cell, and by injecting electrons from the source region into the well or substrate. Electrons are injected from the source region into the well or substrate by utilizing charge pumps to cause a series of current pulses to flow from the well of the memory cell through the source region to the pump. These electrons are then available to participate in the formation of well or substrate hot electrons.

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Kalnitsky, A., et al., "Experimental Investigation of N-MOS Inversion Layers in the Electric Quantum Limit, " Journal of Electronic Materials, vol. 21, No. 3, pp. 367-372, 1992.

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