Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Patent
1998-01-29
1999-03-23
Utech, Benjamin
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
117 15, 117 38, 117 39, 117202, B01D 5302
Patent
active
058853472
ABSTRACT:
The object of this invention is to provide a method and a device for manufacturing semiconductor single crystals by the CZ method in response to the increase in the weight of semiconductor single crystal produced. The necked portion formed beneath the reduced portion can be held and the single crystal under lifting can be re-melted.
REFERENCES:
patent: 3865554 (1975-02-01), Wenckus et al.
patent: 4936947 (1990-06-01), Mackintosh
patent: 5126113 (1992-06-01), Yamagishi et al.
Inagaki Hiroshi
Kubota Toshimichi
Suda Ayumi
Tomioka Junsuke
Chen Kin-Chan
Komatsu Ltd.
Utech Benjamin
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