Apparatus and method for lifting single crystals

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state

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117 15, 117 38, 117 39, 117202, B01D 5302

Patent

active

058853472

ABSTRACT:
The object of this invention is to provide a method and a device for manufacturing semiconductor single crystals by the CZ method in response to the increase in the weight of semiconductor single crystal produced. The necked portion formed beneath the reduced portion can be held and the single crystal under lifting can be re-melted.

REFERENCES:
patent: 3865554 (1975-02-01), Wenckus et al.
patent: 4936947 (1990-06-01), Mackintosh
patent: 5126113 (1992-06-01), Yamagishi et al.

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