Apparatus and method for ion beam implantation using...

Details Apparatus and method for ion beam implantation using... Apparatus and method for ion beam implantation using...

2010-03-18

2011-10-25

Nguyen, Kiet (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

Reexamination Certificate

active

08044375

ABSTRACT:
An ion implantation apparatus with multiple operating modes is disclosed. The ion implantation apparatus has an ion source and an ion extraction means for forming a converging beam on AMU-non-dispersive plane therefrom. The ion implantation apparatus includes magnetic scanner prior to a magnetic analyzer for scanning the beam on the non-dispersive plane, the magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. A rectangular quadruple magnet is provided to collimate the scanned ion beam and fine corrections of the beam incident angles onto a target. A deceleration or acceleration system incorporating energy filtering is at downstream of the beam collimator. A two-dimensional mechanical scanning system for scanning the target is disclosed, in which a beam diagnostic means is build in.

REFERENCES:
patent: 6918351 (2005-07-01), Chen et al.
patent: 7851773 (2010-12-01), Glavish et al.

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