Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With resistive region connecting separate sections of device
Patent
1993-12-27
1995-06-13
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With resistive region connecting separate sections of device
257175, 257169, H01L 2974
Patent
active
054245630
ABSTRACT:
The sensitivity of breakdown voltage to temperature and dV/dT induced currents is reduced in semiconductor power devices having a wide base transistor. The sensitivity is reduced by diverting current from the emitter of the wide base transistor to the base of the wide base transistor (an emitter short that does not reduce breakdown voltage) or by injecting a current into the base of the wide base transistor to its collector (an injected current that may lower the breakdown voltage, but no more than that related to temperature and capacitive current). The invention finds application in both epitaxial grown and substrate based devices.
REFERENCES:
Duclos et al. "Thyristors with Polysilicon Shunt Resistors" RCA Technical Notes TN 1365 Mar. 21, 1985.
Stasior, Richard A. Stasior, "How to Suppress Rate Effect In PNPN Devices" Electronics Jun. 1964.
Arthur Stephen D.
Neilson John M. S.
Temple Victor A. K.
Watrous Donald L.
Harris Corporation
Monin, Jr. Donald L.
Prenty Mark V.
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