Apparatus and method for in-situ monitoring of wafer bonding...

Optics: measuring and testing – Position or displacement – Triangulation

Reexamination Certificate

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C438S016000, C438S617000, C438S007000

Reexamination Certificate

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07612895

ABSTRACT:
An apparatus and a method for semiconductor wafer bonding provide in-situ and real time monitoring of semiconductor wafer bonding time. Deflection of the wafer edges during the last phase of the direct bonding process indicates the end of the bonding process. The apparatus utilizes a distance sensor to measure the deflection of the wafer edges and the bonding time is measured as the time between applying the force (bonding initiation) and completion of the bonding process. The bonding time is used as a real-time quality control parameter for the wafer bonding process.

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Shari Farrens, “Vertical Integration: A Confederacy of Alignment, Bonding, and Materials Technologies”, Mater. Res. Soc. Symp. Proc., 2007, vol. 970.

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