Apparatus and method for growing a crystal and heating an...

Details Apparatus and method for growing a crystal and heating an... Apparatus and method for growing a crystal and heating an...

2011-01-04

2011-01-04

Kunemund, Robert M (Department: 1714)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S020000, C117S031000, C117S035000

Reexamination Certificate

active

07862656

ABSTRACT:
An apparatus and method is provided for pulling a crystal seed from melt for growing a single crystal. The method includes the steps of providing a crucible and providing within the crucible an outer container, and providing coaxially within the outer container an inner container. A protruding portion of the inner container protrudes downward relative to the outer container for containing melt, the inner and outer containers defining an annular channel therebetween which has a bottom wall and contains introduced charge feed. The method further includes the steps of providing for allowing fluid communication between the annular channel and the inner container, delivering charge feed into the annular channel, and generating heat from within the annular channel for preventing the formation of a condensate of the charge feed within the annular channel.

REFERENCES:
patent: 3062821 (1962-11-01), Archer
patent: 4203951 (1980-05-01), Goriletsky
patent: 4698720 (1987-10-01), Finaurini
patent: 5069741 (1991-12-01), Kida et al.
patent: 5891245 (1999-04-01), Atami et al.

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