Electric lamp and discharge devices – With luminescent solid or liquid material – Solid-state type
Patent
1995-04-17
1996-09-03
O'Shea, Sandra L.
Electric lamp and discharge devices
With luminescent solid or liquid material
Solid-state type
313466, 313468, H01J 162
Patent
active
055526675
ABSTRACT:
A method and apparatus for producing photoluminescence emissions (68) from thin CaF.sub.2 films grown on either silicon or silicon/aluminum substrate shows narrow emission linewidth and high emission intensities for CaF.sub.2 with thickness as low as 0,2 .mu.m, The preferred embodiment is doped with a rare-earth such as Nd.
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L. Bausa, R. Legros, and A. Munoz-Yague, "Effect of Nd.sup.3+ Concentration on the Emission Spectra of CaF.sub.2 :Nd Layers Grown by Molecular-Beam Epitaxy," J. Appl. Phys., 70(8), 15 Oct. 1991, pp. 4485-4489.
L. Bausa, R. Legros, and A. Munoz-Yague, "Nd.sup.3+ Incorporation in CaF.sub.2 Layers Grown by Molecular Beam Epitaxy," Appl. Phys. Lett., 59(2), 8 Jul. 1991, pp. 152-154.
L. Bousa, R. Legros, and A. Munoz-Yague, "Optical Characterization of Nd.sup.3+ Doped CaF.sub.2 Layers Grown by Molecular Beam Epitaxy," Journal de Physique IV, Colloque C7, Supplement au Journal de Physique III, vol. 1, Dec. 1991, (2nd International Conference on Lasers, Grenoble, France, 9-11 Jul. 1991), pp. 297-301.
L. Bausaand A. Munoz-Yague, "Optimal Growth Conditions for Molecular-Beam Epitaxy of Nd.sup.3+ Doped Caf.sub.2," Appl. Phys. Lett., 59(27), 30 Dec. 1991, pp. 3511-3513.
L. Bausa, C. Fonataine, E. Daran, and A. Munoz-Yague, "Molecular Beam Epitaxy of Nd-Doped CaF.sub.2 and CaSrF.sub.2 Layers on Si and GaAs Substrates," J. Appl. Phys., 72(2), 15 Jul. 1992, pp. 499-503.
A. N. Tiwari, W. Floeder, S. Blunier, H. Zogg, and H. Weibel; "Molecular Beam Epitaxial Growth of (100) Oriented CdTe on Si (100) Using BaF.sub.2 -CaF.sub.2 as a Buffer," Appl. Phys. Lett., 57(11), 10 Sep. 1990, pp. 1108-1110.
Cho Chin-Chen
Duncan Walter M.
Fan Shou-Kong
Lin Tsen H.
Donaldson Richard L.
Kesterson James C.
O'Shea Sandra L.
Patel Vip
Skrehot Michael K.
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